Bandgap engineering of semiconductor heterostructures by molecular beam epitaxy : physics and applicationsCAPASSO, F; CHO, A. Y.Surface science. 1994, Vol 299-300, Num 1-3, pp 878-891, issn 0039-6028Article

Milliwatt second harmonic generation in quantum cascade lasers with modal phase matchingMALIS, O; BELYANIN, A; SIVCO, D. L et al.Electronics Letters. 2004, Vol 40, Num 25, pp 1586-1587, issn 0013-5194, 2 p.Article

High power and tunable single-mode quantum cascade lasersGMACHL, C; CAPASSO, F; TREDICUCCI, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 75, Num 2-3, pp 93-99, issn 0921-5107Conference Paper

Resonant tunneling in quantum cascade lasersSIRTORI, C; CAPASSO, F; FAIST, J et al.IEEE journal of quantum electronics. 1998, Vol 34, Num 9, pp 1722-1729, issn 0018-9197Article

Highly efficient light-emitting diodes with microcavitiesSCHUBERT, E. F; HUNT, N. E. J; MICOVIC, M et al.Science (Washington, D.C.). 1994, Vol 265, Num 5174, pp 943-945, issn 0036-8075Article

New optical absorption and photocurrent reversal phonomena induced by localized continuum resonances in quantum well heterostructuresSIRTORI, C; FAIST, J; CAPASSO, F et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1191-1194, issn 0038-1101Conference Paper

Molecular beam epitaxy growth of InAs-AlSb-GaSb interband tunneling diodesCHEN, J. F; CHO, A. Y.Journal of electronic materials. 1993, Vol 22, Num 3, pp 259-265, issn 0361-5235Article

Light-emitting transistor based on real-space transfer : electrical and optical propertiesMASTRAPASQUA, M; LURYI, S; CAPASSO, F et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 2, pp 250-258, issn 0018-9383Article

Tin and tellurium doping of InAs using SnTe in molecular beam epitaxy (MBE)LEE, H. G; FISCHER, R. J; HOPKINS, L. C et al.Journal of crystal growth. 1993, Vol 130, Num 3-4, pp 416-420, issn 0022-0248Article

Pseudomorphic In_0.17Ga_0.83As/Al_0.32Ga_0.68As multiple quantum wells under hydrostatic pressure : implications for band alignmentsPEOPLE, R; JAYARAMAN, A; SPUTZ, S. K et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 11, pp 6031-6036, issn 0163-1829Article

1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowthBERGER, P. R; DUTTA, N. K; HUMPHREY, D. A et al.IEEE photonics technology letters. 1992, Vol 4, Num 8, pp 891-894Article

Resonant Stark tuning of second-order susceptibility in coupled quantum wellsSIRTORI, C; CAPASSO, F; SIVCO, D. L et al.Applied physics letters. 1992, Vol 60, Num 2, pp 151-153, issn 0003-6951Article

The effect of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structureCHEN, J. F; CHO, A. Y.Journal of applied physics. 1992, Vol 71, Num 9, pp 4432-4435, issn 0021-8979Article

The influence of InAs well thickness on the negative differential resistance behaviors in GaSb/AlSb/InAs/GaSb/AISb/InAs double barrier structuresHOUNG, M. P; WANG, Y. H; SHEN, C. L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 1048-1050, issn 0734-211XConference Paper

Coupled-cavity resonant passive mode-locked Nd : yttrium lithium fluoride laserKELLR, U; WOODWARD, T. K; SIVCO, D. L et al.Optics letters. 1991, Vol 16, Num 6, pp 390-392, issn 0146-9592Article

Optoelectronic device mapping using differential imaging techniquesSIZER, T. II; WOODWARD, T. K; CHIU, T.-H et al.Journal of applied physics. 1991, Vol 70, Num 7, pp 3837-3842, issn 0021-8979Article

GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowthBERGER, P. R; DUTTA, N. K; SIVCO, N. L et al.Applied physics letters. 1991, Vol 59, Num 22, pp 2826-2828, issn 0003-6951Article

Reduced current thresholds in GaAs/AlGaAs vertical cavity surface emitting lasers using 4° off-oriented (001) GaAs substratesWANG, Y. H; TAI, K; HSIEH, Y. F et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 1057-1061, issn 0022-0248Conference Paper

High transconductance and large peak-to-valley ratio of negative differential conductance in three-terminal InGaAs/InAlAs real-space transfer devicesMENSZ, P. M; GARBINSKI, P. A; CHO, A. Y et al.Applied physics letters. 1990, Vol 57, Num 24, pp 2558-2560, issn 0003-6951, 3 p.Article

Investigation of the influence of the well and the barrier thicknesses in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structuresCHEN, J. F; LONG YANG; CHO, A. Y et al.IEEE electron device letters. 1990, Vol 11, Num 11, pp 532-534, issn 0741-3106, 3 p.Article

Room-temperature continuous-wave vertical-cavity surface-emitting GaAs injection lasersTAI, K; FISCHER, R. J; SEABURY, C. W et al.Applied physics letters. 1989, Vol 55, Num 24, pp 2473-2475, issn 0003-6951Article

Measurement of the pressure dependence of the direct band gap of In_0.53Ga_0.47As using stimulated emissionPEOPLE, R; JAYARAMAN, A; WECHT, K. W et al.Applied physics letters. 1988, Vol 52, Num 25, pp 2124-2126, issn 0003-6951Article

Multiple negative transconductance and differential conductance in a bipolar transistor by sequential quenching of resonant tunnelingCAPASSO, F; SEN, S; CHO, A. Y et al.Applied physics letters. 1988, Vol 53, Num 12, pp 1056-1058, issn 0003-6951Article

Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistorBELTRAM, F; CAPASSO, F; LURYI, S et al.Applied physics letters. 1988, Vol 53, Num 3, pp 219-221, issn 0003-6951Article

New resonant-tunneling devices with multiple negative resistance regions and high room-temperature peak-to-valley ratioSUSANTA SEN; CAPASSO, F; SIVCO, D et al.IEEE electron device letters. 1988, Vol 9, Num 8, pp 402-404, issn 0741-3106Article